Samsung’s Next-Gen HBM4E Memory Promises Breakthrough 3.25 TB/s Bandwidth for AI Acceleration
Samsung has unveiled specifications for its upcoming HBM4E memory technology at the OCP Global Summit, with sources indicating unprecedented bandwidth speeds. The new memory standard reportedly achieves nearly 2.5 times the performance of current HBM3E technology while significantly improving power efficiency for AI workloads.
Samsung Reveals HBM4E Specifications with Record-Breaking Performance
Samsung has become one of the first manufacturers to detail its HBM4E memory roadmap, with the technology reportedly set to deliver groundbreaking performance improvements for artificial intelligence and high-performance computing applications. According to reports from the Open Compute Project Global Summit, the Korean memory giant showcased specifications indicating the HBM4E will achieve bandwidth speeds of up to 3.25 TB/s, representing nearly 2.5 times the performance of current HBM3E technology.